Embedded waveguide detectors
US7075165B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | May 28, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.