Method and mark for metrology of phase errors on phase shift masks
US7075639B2 · kind B2 · utility
10Cited by
87References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Apr 2, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70675
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of inspecting a phase shift mask is disclosed. The method includes receiving a mask having an alternating phase shift pattern. The method also includes forming the alternating phase shift pattern on a wafer. The method further includes analyzing the alternating phase shift pattern on the wafer to determine the phase difference of the alternating phase shift pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.