Magnetic memory with static magnetic offset field
US7075807B2 · kind B2 · utility
9Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Aug 18, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Sep 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetization of the first magnetic layer is magnetically coupled to a first current line and a second current line for switching the free magnetization, and a mechanism for applying a static magnetic offset field in the direction of at least one of the first and second current lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.