Indirect bonding with disappearance of bonding layer
US7078353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Jan 6, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of producing a structure of a thin layer of semiconductor material on a support substrate. The thin layer is obtained from a donor substrate and includes an upper layer of semiconductor material. The method includes forming on the upper layer a bonding layer of a material that accepts diffusion from an element of the material of the upper layer, bonding the donor substrate from the side on which the bonding layer is formed on the upper layer to the support substrate, and diffusing the element from the upper layer into the bonding layer to homogenize the concentration of the element in the bonding layer and the upper layer. The result is that the thin layer of the structure is joined by the bonding layer to the upper layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.