Method for producing a high quality useful layer on a substrate utilizing helium and hydrogen implantations
US7081399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2003 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | Feb 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.