Deposition-selective etch-deposition process for dielectric film gapfill
US7081414B2 · kind B2 · utility
86Cited by
84References
9Claims
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Key dates
| Filing date | May 23, 2003 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | Feb 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.