Semiconductor device and manufacturing method of the same
US7084477B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 23, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jun 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.