Method of passivating and/or removing contaminants on a low-k dielectric/copper surface

US7087518B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• David Gerald Farber · Plano, US
• William W. Dostalik · Plano, US
• Robert J. Kraft · Tequesta, US
• Andrew John McKerrow · Dallas, US
• Kenneth Newton · McKinney, US
• Ting Tsui · Plano, US

Key dates

• Filing date: May 15, 2003
• Grant date: Aug 8, 2006
• Expiry date: May 15, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/306
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificial layer. An effective material for the sacrificial layer is, for example, a silicon carbide. The method can be used to prevent the occurrence of pattern defects in chemically amplified photoresists formed over low-k films.