Formation of controlled sublithographic structures
US7087532B2 · kind B2 · utility
12Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Apr 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.