Semiconductor integrated circuit device with a metallization structure
US7088001B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 13, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | May 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.