MRAM with vertical storage element in two layer-arrangement and field sensor
US7088612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Jan 13, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element including a magnetic storage element including two magnetic layers made of magnetic material, said two magnetic layers opposing each other in a parallel relationship and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, said two magnetic layers further having a magnetic anisotropy, while its magnetization vectors are magnetically coupled to at least one current line, wherein said two magnetic layers are arranged on a same side of said at least one current line, and a magnetic sensor element including at least one magnetic layer having a magnetization vector being magnetically coupled to said magnetization vectors of said two magnetic layers of said magnetic storage element, said magnetic sensor element being electrically coupled to said at least one current line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.