UV-blocking etch stop layer for reducing UV-induced charging of charge storage layer in memory devices in BEOL processing
US7091088B1 · kind B1 · utility
11Cited by
12References
10Claims
0Family size
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Key dates
| Filing date | Jun 3, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Sep 3, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell in a semiconductor device; depositing over the charge trapping dielectric flash memory cell at least one UV-protective layer; forming at least one layer over the at least one UV-protective layer; and etching the at least one layer to form an opening therein with an etchant species selective to stop on a layer below the at least one UV-protective layer, wherein the UV-protective layer comprises a substantially UV-opaque material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.