Replacement metal gate transistor with metal-rich silicon layer and method for making the same
US7091118B1 · kind B1 · utility
36Cited by
10References
19Claims
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Key dates
| Filing date | Nov 16, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Nov 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a replacement metal gate and the process for making the same removes a dummy gate from a semiconductor device. Within the recess left by the dummy gate is a silicon layer on a gate dielectric layer. A replacement metal is deposited on the thin silicon layer and then reacted with the silicon layer to form a metal-rich silicon layer on the gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.