Power transistor

US7091573B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hirler · Isen, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE
• Ralf Henninger · Birkenfeld, DE
• Joachim Krumrey · Eisenlohrsweg, AT
• Martin Poelzl · Ossiach, AT
• Walter Rieger · Arnoldstein, AT

Key dates

• Filing date: Sep 18, 2003
• Grant date: Aug 15, 2006
• Expiry date: Sep 18, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode.