MRAM with magnetic via for storage of information and field sensor
US7092284B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 20, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Aug 24, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, wherein the magnetic sensor element being conductively connected to said at least one current line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.