Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
US7094442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2004 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Oct 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.