Structure and method of liner air gap formation
US7094669B2 · kind B2 · utility
34Cited by
7References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2004 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and method of a semiconductor device with liner air gaps next to interconnects and dielectric layers. A dielectric layer is formed over a lower dielectric layer and a lower interconnect over a substrate. We form an interconnect opening in the dielectric layer. The opening has sidewalls of the dielectric layer. A sacrificial liner is formed over the sidewalls of the interconnect opening. An upper interconnect is formed that fills the opening. We remove the sacrificial liner/spacers to form (air) liner gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.