Formation of a tantalum-nitride layer
US7094680B2 · kind B2 · utility
48Cited by
161References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 23, 2005 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Jun 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.