MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications
US7094691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2003 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Aug 26, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable-temperature bubbler to provide a gaseous tungsten source; setting the variable-temperature bubbler to a predetermined temperature; passing a carrier gas through the variable-temperature bubbler and carrying the gaseous tungsten source with the carrier gas into the CVD vacuum chamber; introducing a nitrogen-containing reactant gas into the CVD vacuum chamber; reacting the gaseous tungsten source and the nitrogen-containing reactant gas above the surface of the silicon wafer in a deposition process to deposit a WxNy thin film on the surface of the silicon wafer; and completing the integrated circuit containing the WxNy thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.