Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
US7095022B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | May 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.