Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films

US7097878B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Ron Rulkens · Milpitas, US
• Dennis M. Hausmann · Lake Oswego, US
• Raihan M. Tarafdar · San Jose, US
• George D. Papasouliotis · Fishkill, US
• Bunsen B. Nie · Fremont, US
• Adrianne K. Tipton · Pleasanton, US
• Jeff Tobin · Nashua, US

Key dates

• Filing date: Jun 22, 2004
• Grant date: Aug 29, 2006
• Expiry date: Jul 4, 2024

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45553
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal-containing precursor on the substrate surface; and exposing the substrate surface to a mixed alkoxy-substituted silicon-containing precursor gas to form the dielectric film.