Deposition process for high aspect ratio trenches
US7097886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | May 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.