Multilayer interconnect structure containing air gaps and method for making
US7098476B2 · kind B2 · utility
21Cited by
13References
4Claims
0Family size
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Key dates
| Filing date | Sep 24, 2004 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Sep 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.