Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer

US7101795B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ming Xi · Palo Alto, US
• Ashok Sinha · Palo Alto, US
• Moris Kori · Palo Alto, US
• Alfred Mak · Union City, US
• Xinliang Lu · Fremont, US
• Ken Kaung Lai · Milpitas, US
• Karl A. Littau · Palo Alto, US

Key dates

• Filing date: Oct 3, 2000
• Grant date: Sep 5, 2006
• Expiry date: May 22, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76876
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.