Method of etching a magnetic material
US7105361B2 · kind B2 · utility
9Cited by
12References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2003 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Feb 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A method of patterning a layer of magnetic material to form isolated magnetic regions. The method forms a mask on a film stack comprising a layer of magnetic material such that the protected and unprotected regions are defined. The unprotected regions are etched in a high temperature environment to form isolated magnetic regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.