Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
US7105372B2 · kind B2 · utility
51Cited by
16References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2004 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Jan 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.