Nitrogen-free dielectric anti-reflective coating and hardmask
US7105460B2 · kind B2 · utility
4Cited by
92References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2002 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Feb 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.