Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
US7108771B2 · kind B2 · utility
11Cited by
27References
17Claims
0Family size
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Key dates
| Filing date | Dec 13, 2001 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Dec 13, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01D3/36
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.