Strained-semiconductor-on-insulator finFET device structures
US7109516B2 · kind B2 · utility
85Cited by
222References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76275
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.