Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
US7112123B2 · kind B2 · utility
14Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Dec 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.