Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
US7112528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2003 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Mar 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates selective chemical vapor deposition aluminum (CVD Al) via fill with a metal wire, preferably copper, formed within a barrier layer. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.