Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device

US7115464B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Rolf Stephan · Dresden, DE
• Manfred Horstmann · Dresden, DE
• Karsten Wieczorek · Dresden, DE

Key dates

• Filing date: Sep 27, 2002
• Grant date: Oct 3, 2006
• Expiry date: Sep 27, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for fabricating a semiconductor device different types of a metal-semiconductor compound are formed on or in at least two different conductive semiconductor regions so that for each semiconductor region the metal-semiconductor compound region may be formed to obtain an optimum overall performance of the semiconductor device. On one of the two semiconductor regions, the metal-semiconductor compound is formed of at least two different metal layers, whereas the metal-semiconductor compound in or on the other semiconductor region is formed from a single metal layer.