Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process
US7115469B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Oct 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabrication of a semiconductor device including an ONO structure as a component of a flash memory device, comprising forming the ONO structure by providing a semiconductor substrate having a silicon surface; forming a first oxide layer on the silicon surface; depositing a silicon nitride layer on the first oxide layer; and forming a top oxide layer on the silicon nitride layer, wherein the top oxide layer is formed by an in-situ steam generation oxidation of a surface of the silicon nitride layer. The semiconductor device may be, e.g., a SONOS two-bit EEPROM device or a floating gate FLASH memory device including an ONO structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.