Methods for controlling formation of deposits in a deposition system and deposition methods including the same
US7118781B1 · kind B1 · utility
18Cited by
28References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2003 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Sep 19, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/488
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.