Memory cell with nanocrystals or nanodots

US7119395B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Gutsche · Dorfen, DE
• Josef Willer · Riemerling, DE
• Cay-Uwe Pinnow · Birkenfeld, DE
• Ralf Symanczyk · Bad Aibling, DE

Key dates

• Filing date: Aug 11, 2004
• Grant date: Oct 10, 2006
• Expiry date: Aug 11, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

The storage layer (6) is in each case present above a region in which the channel region (3) adjoins a source/drain region (2) and is in each case interrupted above an intervening middle part of the channel region (3). The storage layer (6) is formed by material of the gate dielectric (4) and contains silicon or germanium nanocrystals or nanodots introduced through ion implantation. The gate electrode (5) is widened at the flanks by electrically conductive spacers (7).