Stressed semiconductor device structures having granular semiconductor material
US7122849B2 · kind B2 · utility
4Cited by
79References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2003 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device structure, includes: providing a substrate, providing an electrode on the substrate, forming a recess in the electrode, the recess having an opening, disposing a small grain semiconductor material within the recess, covering the opening to contain the small grain semiconductor material, within the recess, and then annealing the resultant structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.