Method and system for performing more consistent switching of magnetic elements in a magnetic memory
US7123506B2 · kind B2 · utility
1Cited by
8References
12Claims
0Family size
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Key dates
| Filing date | Jun 3, 2004 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Jun 3, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.