Robust Group III light emitting diode for high reliability in standard packaging applications
US7125737B2 · kind B2 · utility
24Cited by
26References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 8, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Nov 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.