Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors
US7125758B2 · kind B2 · utility
29Cited by
12References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Sep 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.