Method for fabricating a self-aligning mask

US7125778B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dirk Efferenn · Dresden, DE
• Ulrike Grüning Von Schwerin · Birkenfeld, DE
• Hans-Peter Moll · Dresden, DE
• Jorg Radecker · Dresden, DE
• Andreas Wich-Glasen · Neustadt an der Donau, DE

Key dates

• Filing date: Aug 27, 2002
• Grant date: Oct 24, 2006
• Expiry date: Jun 1, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0337
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A description is given of a method for a selective masking of a structure with a small structure surface with respect to a structure with a larger structure surface. To that end, the structures are filled with a covering layer. The covering layer is formed with a larger thickness above the first structure, which has the larger structure surface, than above the second structure. Afterward, the covering layer is removed by a homogeneous removal method, so that first the structure surface of the second structure is uncovered. A simple self-aligning method for fabricating a mask for uncovering the second structure is thus provided.