Air gaps between conductive lines for reduced RC delay of integrated circuits
US7125782B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 14, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Oct 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming air gaps or porous dielectric materials between interconnects of integrated circuits and structures thereof. Air gaps or highly porous dielectric material having a dielectric constant of close to or equal to 1.0 are formed in a first region but not a second region of an interconnect layer. The air gaps or highly porous dielectric material are formed by depositing a first insulating material comprising an energy-sensitive material over a workpiece, depositing a second insulating material over the first insulating material, and exposing the workpiece to energy. At least a portion of the first insulating material in the first region is removed through the second insulating material. Structurally stable insulating material is disposed between conductive lines in the second region of the workpiece, providing mechanical strength for the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.