Phase change memory and phase change recording medium
US7126149B2 · kind B2 · utility
147Cited by
0References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Nov 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.