Display device, process of fabricating same, and apparatus for fabricating same
US7129124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2003 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Jul 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.