Methods and apparatus for tuning a set of plasma processing steps
US7138067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2004 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | May 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.