Method for reducing tungsten film roughness and improving step coverage
US7141494B2 · kind B2 · utility
121Cited by
35References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2003 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Aug 26, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.