Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof
US7141857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Jun 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnOx, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.