Method for pre-retaining CB opening
US7144799B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2005 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Apr 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.