Methods of forming boron carbo-nitride layers for integrated circuit devices
US7144803B2 · kind B2 · utility
14Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2004 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Aug 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.