Sequential deposition/anneal film densification method

US7148155B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Raihan M. Tarafdar · San Jose, US
• George D. Papasouliotis · Fishkill, US
• Ron Rulkens · Milpitas, US
• Dennis M. Hausmann · Lake Oswego, US
• Jeff Tobin · Nashua, US
• Adrianne K. Tipton · Pleasanton, US
• Bunsen B. Nie · Fremont, US

Key dates

• Filing date: Oct 26, 2004
• Grant date: Dec 12, 2006
• Expiry date: Oct 26, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.