Vertical channel field effect transistors having insulating layers thereon
US7148541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Feb 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
Abstract
A field effect transistor can include a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The transistor can also include a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction. Related methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.